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| KBJ4005G-KBJ410G Vishay Lite-On Power Semiconducter 4.0A Glass Passivated Bridge Rectifier Features D D D D D D Glass passivated die construction High case dielectric strength of 1500VRMS Low reverse leakage current Surge overload rating to 120A peak Ideal for printed circuit board applications Plastic material - UL Recognition flammability classification 94V-0 component index, file number E95060 14 413 D This series isUL listed under recognized Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC Bl ki voltage DC Blocking lt Test Conditions Type KBJ4005G KBJ401G KBJ402G KBJ404G KBJ406G KBJ408G KBJ410G Symbol VRRM =VRWM =VR V Value 50 100 200 400 600 800 1000 120 4 -65...+150 Unit V V V V V V V A A C Peak forward surge current Average forward current TC=115C Junction and storage temperature range IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Thermal resistance junction to case Test Conditions IF=2A TC=25C TC=125C VR=4V, f=1MHz mounted on 300x300x1.6mm aluminum plate Type Symbol VF IR IR CD RthJC Min Typ Max 1 5 500 Unit V mA mA pF K/W 40 9 Rev. A2, 24-Jun-98 1 (4) KBJ4005G-KBJ410G Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) IFAV - Average Forward Current ( A ) 6 C D - Diode Capacitance ( pF ) 5 4 3 2 1 Resistive or inductive load 1000 Tj = 25C f = 1 MHz 100 0 0 15635 25 50 75 100 125 150 15638 10 0.1 Tamb - Ambient Temperature ( C ) 1.0 10 VR - Reverse Voltage ( V ) 100 Figure 1. Max. Average Forward Current vs. Ambient Temperature 10 Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 1000 IR - Reverse Current ( m A ) Tj = 150C IF - Forward Current ( A ) Tj = 25C 100 1.0 Tj = 125C Tj = 100C 10 Tj = 150C 0.1 1.0 Tj = 25C 0.01 0 15636 IF Pulse Width = 300 s 0.4 0.8 1.2 1.6 1.8 VF - Forward Voltage ( V ) 0.1 0 15639 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage IFSM - Peak Forward Surge Current ( A ) 180 160 Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Tj = 150C Single Half Sine-Wave (JEDEC Method) 120 80 40 0 1 10 Number of Cycles at 60 Hz 100 15637 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 KBJ4005G-KBJ410G Vishay Lite-On Power Semiconducter Dimensions in mm 14472 Case: molded plastic Polarity: molded on body Approx. weight: 4.6 grams Mounting: through hole for #6 screw Mounting torque: 5.0 in-lbs maximum Marking: type number Rev. A2, 24-Jun-98 3 (4) KBJ4005G-KBJ410G Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98 |
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